The Role of F-doping and the Sintering Temperature on the Superconductivity and Lattice Constants in LaOFeGe Compounds
DOI:
https://doi.org/10.37375/sjfssu.v1i1.139Keywords:
Superconductivity, Quaternary oxypnictides, Electrical resistivity, Fourpoint probe, Solid state reaction methodAbstract
The most prominent indicator of superconductivity is the superconducting transition temperature (Tc) that refers to three points. The onset transition temperature (Tonset) is defined as the deviation point away from the ρ(T) straight line (onset of the drop in resistivity). The midpoint transition temperature (Tmidpoint) is defined as the temperature, where resistivity becomes 50% of its value at Tonset. The zero-resistance transition temperature (Tρ≈0) is defined as the temperature, in which the resistance is identically zero or only immeasurably small. These indicators of temperatures associated with some factors. In this article, the X-ray diffraction and electrical resistivity measurements of LaO1-xFxFeGe samples are reported. This compound was successfully synthesized via a solid state reaction method with the presence of germanium Ge in the conduction layer. Furthermore, some factors affecting the superconducting transition temperature were studied, which are the F-doping dependence of Tonset, Tmidpoint, and lattice parameters, and sintering temperature dependence of Tonset.
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